dmn20 08 l fu document number: ds 38625 rev. 3 - 2 1 of 7 www.diodes.com june 2016 ? diodes incorporated dm n20 08 l fu dual n-channel enhancement mode mosfet product summary b v dss r ds( on ) max i d t a = + 25 c 2 0v 5.4 m ? @ v gs = 4.5 v 1 4 . 5 a 6.2 m ? @ v gs = 4.0 v 1 3 . 5 a 6 . 4 m ? @ v gs = 3. 7 v 13 . 0 a 7.5 m ? @ v gs = 3.1 v 12 . 0 a 9.6 m ? @ v gs = 2.5 v 10 . 5 a description this mosfet is designed to minimize the on-state resistance (r ds(o n) ) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? ? ? features ? ? ? ? ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? ? molded plastic, green molding compound ? ? C ? ? ordering information (note 4) part number case packaging dmn20 08 l fu - 7 u - dfn2030 - 6 (type b) 3 , 000 / tape & reel dmn20 08 l fu - 13 u - dfn2030 - 6 (type b) 10, 000 / tape & reel notes: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen- and antimony-free, "green" and lead - f ree . 3. halogen- and antimony- free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http:// www.diodes.com/products/packages.html. marking information n28 = product type marking code y yww = date code marking y y = last two digit s of y ear ( ex: 1 6 for 20 1 6 ) ww = week code (01 to 53) n28 y y w w bottom view u - dfn 203 0 - 6 (type b) equivalent circuit t op view pin - out esd protected d2 s2 g2 gate protection diode d1 s1 g1 gate protection diode e4
dmn20 08 l fu document number: ds 38625 rev. 3 - 2 2 of 7 www.diodes.com june 2016 ? diodes incorporated dm n20 08 l fu maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 2 0 v gate - source voltage v gss 12 v continuous drain current (note 6 ) v gs = 4.5 v steady state t a = + 25c t a = + 70 c i d 1 4 . 5 11 .5 a maximum continuous body diode f orward current (note 6 ) i s 2.2 a pulsed drain curren t ( 10 s pulse, d uty cycle = 1% ) i d m 75 a avalanche current (note 7 ) l = 0.1 mh i a s 26 a avalanche energy (note 7 ) l = 0.1 mh e a s 34 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) t a = + 25c p d 1.0 w thermal resistance, junction to ambient (note 5 ) s teady state r , ja 123 c/w total power dissipation (note 6 ) t a = + 25c p d 1.7 w thermal resistance, junction to ambient (note 6 ) s teady state r , ja 7 3 c/w thermal resistance, junction to case r , j c 12 operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 2 0 2 2 v v gs = 0v, i d $ zero gate voltage drain current t j = + 25c i dss 2 2 1.0 a v ds = 16 v , v gs = 0v gate - source leakage i gss 2 2 10 a v gs = 9.6 v , v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 0. 5 2 1. 5 v v ds = v gs , i d = 250 $ static drain - source on - resistance r ds (on) 2 4.7 5.4 m ? v gs = 4.5 v, i d = 5.5 a 4.8 6.2 v gs = 4. 0 v, i d = 5.5 a 4.9 6.4 v gs = 3.7 v, i d = 5.5 a 5.1 7.5 v gs = 3.1 v, i d = 5.5 a 5.7 9.6 v gs = 2.5 v, i d = 5.5 a diode forward voltage v sd 2 0.7 1.2 v v gs = 0v, i s = 1 1 a dynamic characteristics (note 9 ) input capacitance c iss 2 1 , 418 2 pf v ds = 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss 2 323 2 pf reverse transfer capacitance c rss 2 106 2 pf gate resistance r g 2 465 2 ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge (v gs = 4 .5v) q g 2 18.7 2 nc v ds = 1 6 v, i d = 11 a , total gate charge (v gs = 10 v) q g 2 42.3 2 nc gate - source charge q gs 2 3.2 2 nc gate - drain charge q gd 2 4.4 2 nc turn - on delay time t d(on) 2 277 2 ns v dd = 16v, i d = 5.5 a , v gs = 4.5v, r g = 6 ? turn - on rise time t r 2 653 2 ns turn - off delay time t d(off) 2 1 , 989 2 ns turn - off fall time t f 2 1 , 208 2 ns reverse recovery time t rr 2 492 2 ns i f = 11 $ g l g w $ v reverse recovery charge q rr 2 908 2 nc n otes : 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1 - inch square copper plate. 7 . i a s and e a s rating s are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dmn20 08 l fu document number: ds 38625 rev. 3 - 2 3 of 7 www.diodes.com june 2016 ? diodes incorporated dm n20 08 l fu 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = 1.3v v gs =1.5v v gs = 4.0v v gs = 3.1v v gs = 2.5v v gs =2.0v v gs = 4.5v v gs = 3.7v 4 4.5 5 5.5 6 6.5 7 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance (m
i d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 4.5v v gs = 4.0v v gs = 3.7v v gs = 3.1v v gs = 2.5v 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 r ds(on) , drain - source on - resistance (m
) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 5.5a 2 4 6 8 10 0 5 10 15 20 r ds(on) , drain - source on - resistance (m
) i d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature t j = - 55
dmn20 08 l fu document number: ds 38625 rev. 3 - 2 4 of 7 www.diodes.com june 2016 ? diodes incorporated dm n20 08 l fu 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - esistance ( : ) t j , junction temperature ( t c = 25
dmn20 08 l fu document number: ds 38625 rev. 3 - 2 5 of 7 www.diodes.com june 2016 ? diodes incorporated dm n20 08 l fu 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r ja (t) = r(t) * r ja r ja = 121
dmn20 08 l fu document number: ds 38625 rev. 3 - 2 6 of 7 www.diodes.com june 2016 ? diodes incorporated dm n20 08 l fu package outline dimensions please see http://www.diodes.com/ package - outlines.html for the latest version. u - dfn2030 - 6 (type b) suggested pad layout please see http://www.diodes.com/ package - outlines.html for the latest version. u - dfn2030 - 6 (type b) u - dfn 2030 - 6 (type b) dim min max typ a 0. 55 0. 65 0.60 a1 0 .00 0.05 0.02 a 3 0.15 b 0. 20 0. 30 0. 25 d 1.95 2.05 2 . 0 0 d2 1.40 1.60 1.50 e 2.95 3. 05 3. 0 0 e2 1.65 1.75 1.70 e 0.50 l 0. 28 0. 38 0. 33 z 0.375 all dimensions in mm dimensions value (in mm) g 0.220 x 0.350 x1 0.850 x2 1.600 x3 1.350 y 0.530 y1 1.800 y2 3.300 d e e b l e2 z(4x) a a1 a3 seating plane d2 pin#1 id y1 y x x1 x2 y2 g x3
dmn20 08 l fu document number: ds 38625 rev. 3 - 2 7 of 7 www.diodes.com june 2016 ? diodes incorporated dm n20 08 l fu important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. t his document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products ar e specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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